Luminescence properties of defects in GaN

One-dimensional exciton luminescence induced by extended defects in nonpolar GaN Al GaN quantum wells

In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either aor m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been processed using the epitaxial lateral overgrowth technique. As expected for polarization-free heterostructures, the larger the QW width for a given...

Unusual luminescence lines in GaN

Computationally predicted energies and properties of defects in GaN

Recent developments in theoretical techniques have significantly improved the predictive power of density-functional-based calculations. In this review, we discuss how such advancements have enabled improved understanding of native point defects in GaN. We review the methodologies for the calculation of point defects, and discuss how techniques for overcoming the band-gap problem of density fun...

Calculated properties of point defects in Be-doped GaN

The properties of several point defects in hexagonal gallium nitride that can compensate beryllium shallow acceptors (BeGa) are calculated using the AIMPRO method based on local density functional theory. BeGa itself is predicted to have local vibrational modes ~LVM’s! very similar to magnesium acceptors. The highest frequency is about 663 cm. Consistent with other recent studies, we find that ...

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN